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STP2NC70Z, STP2NC70ZFP STD1NC70Z, STD1NC70Z-1
N-CHANNEL 700V - 7.3 - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHTMIII MOSFET
TYPE STP2NC70Z STP2NC70ZFP STD1NC70Z STD1NC70Z-1
s s s s s
VDSS 700 700 700 700 V V V V
RDS(on) < 8.5 < 8.5 < 8.5 < 8.5
ID 1.4 A 1.4 A 1.4 A 1.4 A
Pw 50 W 25 W 45 W 45 W
1
3 2
TYPICAL RDS(on) = 7.3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES
TO-220
TO-220FP
3 2 1
3 1
IPAK
DPAK
DESCRIPTION The third generation of MESH OVERLAYTM Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications..
APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE STP2NC70Z STP2NC70ZFP STD1NC70ZT4 STD1NC70Z-1 MARKING P2NC70Z P2NC70ZFP D1NC70Z D1NC70Z PACKAGE TO-220 TO-220FP DPAK IPAK PACKAGING TUBE TUBE TAPE & REEL TUBE
February 2002
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STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
STP2NC70Z
Value
STP2NC70ZFP STD1NC70Z STD1NC70Z-1
Unit
VDS VDGR VGS ID ID IDM (l) PTOT IGS VESD(G-S) dv/dt (1) VISO Tj Tstg
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate-source Current (DC) Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 1.4 0.9 5.6 50 0.4
700 700 25 1.4 (*) 0.9 (*) 5.6 (*) 25 0.2 50 2000 3 2500 -65 to 150 -65 to 150 1.4 0.9 5.6 45 0.36
V V V A A A W W/C mA V V/ns V C C
(l) Pulse width limited by safe operating area (1) I SD 10A, di/dt 200A/s, VDD V (BR)DSS, Tj T JMAX. (*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220 Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max (for SMD) (#) Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 62.5 300 2.5 TO-220FP 5 DPAK IPAK 2.75 100 100 275 C/W C/W C/W C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 1.4 60 Unit A mJ
GATE-SOURCE ZENER DIODE
Symbol BVGSO T Parameter Gate-Source Breakdown Voltage Voltage Thermal Coefficient Test Conditions Igs= 1mA (Open Drain) T=25C Note(3) Min. 25 1.3 Typ. Max. Unit V 10-4/C
Note: 3. VBV = T (25-T) BVGSO(25) (#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 0.7 A 3 4 7.3 Min. 700 1 50 10 5 8.5 Typ. Max. Unit V A A A V
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 0.7 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 1.2 305 34 3.6 28 Max. Unit S pF pF pF pF
VGS = 0V, VDS = 0V to 560V
SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 350 V, ID = 0.8 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 560V, ID = 1.6 A, VGS = 10V Min. Typ. 11 8 8 2 3.8 12 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 350 V, ID = 0.8 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 560V, ID = 1.6 A, RG = 4.7, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 27 30 20 5 25 Max. Unit ns ns ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.4 A, VGS = 0 ISD = 1.6 A, di/dt = 100A/s VDD = 30V, Tj = 150C (see test circuit, Figure 5) 370 1.3 6.8 Test Conditions Min. Typ. Max. 1.4 5.6 1.6 Unit A A V ns C A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS .
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STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Safe Operating Area For TO-220 Thermal Impedance For TO-220
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Safe Operating Area For DPAK/IPAK
Thermal Impedance For DPAK/IPAK
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STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
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STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
A
C
D1
L2
D
F1
G1
E
Dia. L5 L7 L6 L4
P011C
L9
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F2
F
G
H2
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
TO-220FP MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7
F1
D
F
G1
E H F2
123 L2 L4
G
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STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
H
A
C C2
L2 D
B3
B6
A1
L
=
=
3
B5
B
A3
=
B2
=
G
=
E
L1
1
2
=
0068771-E
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STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
DIM.
P032P_B
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STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2500
mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40
15.7 16.3
inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618
0.641
MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1
* on sales type
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STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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